Analysis and modelling of broad-band ferrite-based coaxial transmission-line transformers

The work presented in the paper focuses on accuracy of models for broad-band ferrite based coaxial transmission-line transformers. Soft-ferrites are largely used in VHF/UHF components allowing band enlargement on the low-edge side. Degradation of frequency performance on the high-edge side are produced both by ferrite losses, and by parasitic capacitance due to connection to the thermal and electrical ground in high power applications. Both a circuital model for low-power applications and a scalable e.m. model for high-power applications are presented and discussed. © 2010 EuMA

Methods for Model Complexity Reduction for the Nonlinear Calibration of Amplifiers Using Volterra Kernels

Volterra models allow modeling nonlinear dynamical systems, even though they require the estimation of a large number of parameters and have, consequently, potentially large computational costs. The pruning of Volterra models is thus of fundamental importance to reduce the computational costs of nonlinear calibration, and improve stability and speed, while preserving accuracy. Several techniques (LASSO, DOMP and OBS) and their variants (WLASSO and OBD) are compared in this paper for the experimental calibration of an IF amplifier. The results show that Volterra models can be simplified, yielding models that are 4–5 times sparser, with a limited impact on accuracy. About 6 dB of improved Error Vector Magnitude (EVM) is obtained, improving the dynamic range of the amplifiers. The Symbol Error Rate (SER) is greatly reduced by calibration at a large input power, and pruning reduces the model complexity without hindering SER. Hence, pruning allows improving the dynamic range of the amplifier, with almost an order of magnitude reduction in model complexity. We propose the OBS technique, used in the neural network field, in conjunction with the better known DOMP technique, to prune the model with the best accuracy. The simulations show, in fact, that the OBS and DOMP techniques outperform the others, and OBD, LASSO and WLASSO are, in turn, less efficient. A methodology for pruning in the complex domain is described, based on the Frisch–Waugh–Lovell (FWL) theorem, to separate the linear and nonlinear sections of the model. This is essential because linear models are used for equalization and cannot be pruned to preserve model generality vis-a-vis channel variations, whereas nonlinear models must be pruned as much as possible to minimize the computational overhead. This methodology can be extended to models other than the Volterra one, as the only conditions we impose on the nonlinear model are that it is feedforward and linear in the parameters

A power efficient frequency divider with 55 GHz self-oscillating frequency in SiGe BiCMOS

A power efficient static frequency divider in commercial 55 nm SiGe BiCMOS technology isreported. A standard Current Mode Logic (CML)-based architecture is adopted, and optimizationof layout, biasing and transistor sizes allows achieving a maximum input frequency of 63 GHz anda self-oscillating frequency of 55 GHz, while consuming 23.7 mW from a 3 V supply. This resultsin high efficiency with respect to other static frequency dividers in BiCMOS technology presentedin the literature. The divider topology does not use inductors, thus optimizing the area footprint:the divider core occupies 60×65μm2on silicon

Low power class-AB VCII with extended dynamic range

voltage swing both at the X terminal and at the Z terminal. The VCII consists of a regulated common gate configuration at the Y current input terminal and a class-AB complementary-MOS closed loop output voltage follower that ensures the voltage buffering action between the voltage input X and the voltage output Z terminals. Spice simulation results using AMS 0.35 μm with a ±0.9 V supply voltage are provided to demonstrate the validity of the proposed topology. With a total power consumption of 28 μW, the VCII achieves a voltage swing at the X terminal of ±0.8 V, whereas a ±0.72 V is achieved on the Z terminal. Simulation results for DC and AC voltage and current gains are given, as well as harmonic distortions and noise figures. A final comparison table is also presented, where the proposed VCII is compared with other solutions presented in the literature